RF detector diode in a tiny SOT-323
The Infineon BAT15-05WH6327XTSA1 is a Schottky diode pair in a common-cathode configuration, designed for RF mixer and detector circuits. It handles a maximum forward current of 110 mA and a peak reverse voltage of 4V — low enough that you are working with small-signal RF paths, not power rectification. Junction capacitance is just 0.5 pF at zero bias, which keeps the diode transparent at UHF and low microwave frequencies. Series resistance measures 5.5 Ω at 50 mA and 1 MHz, a figure that directly affects conversion loss when the diode is used as a mixer element.
What the key ratings mean for your RF front-end
The 0.5 pF capacitance at 0V reverse bias is the headline spec here. In a detector circuit, that capacitance forms a low-pass corner with the source impedance — too high and you roll off the modulation bandwidth. At 4V peak reverse, the diode is meant for signal levels typical of an antenna input or a local-oscillator injection, not for high-swing stages. The 5.5 Ω series resistance at 50 mA tells you the on-resistance under typical RF drive; lower resistance means less signal loss in the mixing process. Maximum junction temperature is 150°C, so the part can sit near a warm RF amplifier without derating concerns.
Lifecycle and sourcing
Infineon lists the BAT15-05WH6327XTSA1 as Active — no end-of-life notice, no last-time-buy window to track. That makes it safe to qualify into a new BOM or to replenish an existing production line without worrying about a sudden discontinuation.