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Infineon Technologies BAS7007WE6327BTSA1 — Discrete Semiconductors

Infineon BAS7007WE6327BTSA1 Schottky Diode, 70V, 100ps trr

MPNBAS7007WE6327BTSA1
Obsolete

Infineon BAS7007WE6327BTSA1, dual Schottky diode, 70V reverse voltage, 100ps reverse recovery time, 70mA average rectified current per diode, SC-82A SOT-343 surface-mount package.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BAS7007WE6327BTSA1 specifications
ParameterValue
Diode typeSchottky
MountingSurface Mount
Voltage - DC reverse (Vr)70 V
Voltage - forward (Vf) (Max) @ if1 V @ 15 mA
Current - reverse leakage @ vr100 nA @ 50 V
Current - average rectified (Io) (per diode)70mA (DC)
Operating temperature - junction150°C(Max)
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR)
CaseSC-82A, SOT-343
Diode configuration2 Independent
Reverse recovery time100 ps

Product details

The Infineon BAS7007WE6327BTSA1 packs two independent Schottky diodes into a single SC-82A SOT-343 surface-mount package.

70 V blocking, 100 nA leakage — the BOM-fit numbers

With a maximum reverse leakage of 100 nA at 50 V, the BAS7007WE6327BTSA1 suits low-power standby rails and battery-powered designs where leakage current directly affects quiescent draw. The 70 V reverse voltage gives headroom for 48 V telecom rails and 24 V industrial buses with margin. Each diode conducts up to 70 mA average rectified current, enough for signal-level switching and low-current rectification.

Infineon lists the BAS7007WE6327BTSA1 as obsolete. Buyers filling a BOM line for this exact code should confirm availability and date code at quote time — there is no official Infineon successor listed for this order code.

Frequently asked questions

What is the reverse recovery time of BAS7007W?

The reverse recovery time (trr) is 100 ps, making it suitable for high-speed switching applications where fast turn-off is critical.