Dual Schottky in a single SOT-23 footprint
The BAS7006E6327HTSA1 packs two 70 V, 70 mA Schottky diodes in a common-anode pair inside a SOT-23-3 package. The 100 ps reverse recovery time means it handles high-frequency switching without the stored-charge penalty of a PN-junction diode — useful for clamping inductive kickback or steering signals in a 10+ MHz path. Each diode is rated for 70 mA DC average, with a forward drop of 1 V at 15 mA. The reverse leakage sits at 100 nA at 50 V — the Schottky barrier trades higher leakage for the fast turn-off, so budget the leakage into your quiescent budget if the diode is biased near its reverse rating in a high-impedance node.
Housed in the PG-SOT23 (SOT-23-3) package, the BAS7006E6327HTSA1 shares the same 2.9 mm × 1.3 mm footprint as thousands of standard SOT-23 transistors and diodes. The common-anode pinout means the shared cathode is the centre pin — verify your PCB layout matches before committing the BOM line. Supplied on tape and reel or cut tape, the part is compatible with standard pick-and-place processes. The junction temperature limit is 150 °C, so the board-level thermal environment — not the package — sets the derating curve.