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Infineon Technologies BAS7002LE6327 — Discrete Semiconductors

Infineon BAS7002LE6327 Schottky Diode, 70V, 70mA, 100ps trr

MPNBAS7002LE6327
Active

Infineon BAS7002LE6327 Schottky diode, 70 V reverse voltage, 70 mA average rectified current, 100 ps reverse recovery time, 1.5 pF capacitance, surface-mount SOD-882 / PG-TSLP-2-1 package.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BAS7002LE6327 specifications
ParameterValue
Diode typeSchottky
MountingSurface Mount
Voltage - DC reverse (Vr)70 V
Voltage - forward (Vf) (Max) @ if1 V @ 15 mA
Current - reverse leakage @ vr100 nA @ 50 V
Current - average rectified70mA
Operating temperature - junction150°C
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageBulk
CaseSOD-882
Capacitance @ vr,1.5pF @ 0V, 1MHz
Reverse recovery time100 ps

Product details

Schottky for fast edge-rate clamping and signal conditioning

The Infineon BAS7002LE6327 is a small-signal Schottky diode in a SOD-882 (PG-TSLP-2-1) package, rated for 70 V reverse voltage and 70 mA average rectified current. Its 100 ps reverse recovery time and 1.5 pF capacitance at 0 V bias make it a natural fit for RF front-end ESD clamping, mixer protection, and high-speed logic-level shifting where every picosecond of recovery and femtofarad of loading matter.

The 100 ps reverse recovery time and 1.5 pF capacitance at 0 V bias suit RF front-end clamping and high-speed logic-level shifting.

Infineon lists the BAS7002LE6327 as Active.

Frequently asked questions

Where can I find the datasheet for BAS7002LE6327?

The datasheet is available from Infineon's product page for the BAS7002LE6327. It includes the full electrical characteristics, thermal derating curves, and recommended land pattern for the SOD-882 package.