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Infineon Technologies BAS70-07E6433 — Discrete Semiconductors

Infineon BAS70-07E6433 Schottky Diode, 70 V, 70 mA

MPNBAS70-07E6433
Active

Infineon BAS70-07E6433 dual Schottky diode, 70 V Vr, 70 mA per diode, 100 ps trr, 2 independent diodes, PG-SOT143-4 package, surface mount.

$0.1100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BAS70-07E6433 specifications
ParameterValue
Diode typeSchottky
MountingSurface Mount
Voltage - DC reverse (Vr)70 V
Voltage - forward (Vf) (Max) @ if1 V @ 15 mA
Current - reverse leakage @ vr100 nA @ 50 V
Current - average rectified (Io) (per diode)70mA (DC)
Operating temperature - junction150°C
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageBulk
CaseTO-253-4, TO-253AA
Diode configuration2 Independent
Reverse recovery time100 ps

Product details

The Infineon BAS70-07E6433 packs two independent Schottky diodes in a single PG-SOT143-4 surface-mount package, each rated for 70 V reverse voltage and 70 mA average rectified current. The 100 ps reverse recovery time is the headline number here — that sub-nanosecond switching speed makes this diode a natural fit for high-frequency clamping, flyback snubbing, and OR-ing in low-power DC-DC converters where every nanosecond of dead time costs efficiency. Reverse leakage is specified at 100 nA at 50 V, which is tight enough to avoid draining a battery in a wake-up circuit or a sample-and-hold front end.

Dual-diode configuration — board-space savings without the routing headache

Two independent Schottky diodes in a four-pin SOT-143 package means you get two separate signal paths on one footprint. That is useful for dual-rail ESD clamping (one diode per rail), for building a low-loss OR-ing stage from two supplies, or for a full-wave rectifier in a low-current AC sense circuit. The independent cathode and anode connections give layout flexibility — no common-cathode or common-anode strapping to work around.

Infineon lists the BAS70-07E6433 as Active.

Frequently asked questions

What is the reverse recovery time of BAS70-07E6433?

The reverse recovery time (trr) is 100 ps — a sub-nanosecond figure that suits high-speed switching applications like DC-DC converters and signal clamping where fast turn-off reduces switching losses.

What is the reverse leakage current of BAS70-07E6433?

Reverse leakage is specified at 100 nA at 50 V reverse voltage. This low leakage is suitable for battery-powered circuits or high-impedance nodes where leakage current would otherwise degrade accuracy or drain the supply.