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Infineon Technologies BAS70-04B5000 — Discrete Semiconductors

Infineon BAS70-04B5000 Schottky Diode, 70 V, 70 mA, AEC-Q101

MPNBAS70-04B5000
Active

Infineon BAS70-04B5000, Automotive AEC-Q101 Schottky diode, 70 V reverse voltage, 70 mA average rectified current, 1 V forward drop at 15 mA, 100 nA leakage at 50 V, 1 Pair Series Connection, PG-SOT23-3-3 package.

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Specifications

BAS70-04B5000 Technical Specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Diode typeSchottky
Mounting typeSurface Mount
Voltage - DC reverse (Vr)70 V
Voltage - forward (Vf) (Max) @ if1 V @ 15 mA
Current - reverse leakage @ vr100 nA @ 50 V
Current - average rectified (Io) (per diode)70mA (DC)
Operating temperature - junction150°C
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageBulk
CaseTO-236-3, SC-59, SOT-23-3
Diode configuration1 Pair Series Connection

Product details

Automotive-grade Schottky pair in SOT-23

The Infineon BAS70-04B5000 is a dual Schottky diode with the two junctions connected in series inside a single PG-SOT23-3-3 surface-mount package. It is qualified to AEC-Q101, making it suitable for automotive and other high-reliability environments where the part must meet the stress and lifetime requirements of the automotive electronics council. Each diode is rated for a maximum reverse voltage of 70 V and an average rectified current of 70 mA (DC). Forward voltage is specified at 1 V maximum when carrying 15 mA. Reverse leakage is 100 nA maximum at 50 V reverse bias. The series-connected configuration is useful for applications requiring two Schottky diodes in series — for example, in clamping networks, steering diodes, or as a voltage-doubling stage — where a single SOT-23 footprint replaces two discrete diodes.

70 V blocking, 70 mA forward — what the ratings mean

The 70 V reverse voltage rating sets the maximum DC or repetitive peak reverse voltage the diode can block. The 70 mA average rectified current per diode is the DC load limit. Forward voltage of 1 V at 15 mA is typical for a small-signal Schottky — the low Vf compared to a PN-junction diode reduces conduction loss in low-current rectification or OR-ing applications. The 100 nA leakage at 50 V is low enough for battery-powered or high-impedance sense circuits where leakage current would otherwise shift bias points. Operating junction temperature is rated to 150 °C, which aligns with under-hood automotive ambient temperatures when derated for self-heating.

Frequently asked questions

Is BAS70-04B5000 AEC-Q101 qualified?

Yes, the BAS70-04B5000 is listed under the Automotive, AEC-Q101 series. This qualification covers the stress tests required for automotive-grade semiconductor components, including temperature cycling, high-temperature reverse bias, and humidity testing.

What is the exact replacement for BAS70-04B5000?

The BAS70-04B5000 is an active Infineon part with no announced discontinuation. For dual-sourcing, evaluate other AEC-Q101 Schottky diodes in SOT-23 with 70 V reverse voltage and 70 mA current rating, but verify pin compatibility and electrical characteristics against your design.