Schottky diode for high-speed, low-capacitance applications
The Infineon BAS70-02W E6327 is a Schottky diode in a compact SC-80 surface-mount package, designed for applications where fast switching and low junction capacitance are critical. With a maximum reverse voltage of 70 V and an average rectified current rating of 70 mA, it suits signal-level rectification, clamping, and protection circuits in portable and RF equipment. The 100 ps reverse recovery time and 1.5 pF capacitance at 0 V bias make it a strong candidate for high-frequency demodulation or ESD suppression where signal integrity matters.
The 70 V reverse voltage (Vr) and 70 mA average forward current (Io) define the operating envelope. For a low-power rail or signal line, derate the 70 mA Io by at least 20% for continuous operation, leaving about 56 mA headroom. The 100 nA reverse leakage at 50 V is negligible in most signal paths but worth checking if the diode sits across a high-impedance node in a battery-powered design. The 1 V forward drop at 15 mA is typical for a small-signal Schottky — acceptable for sub-3 V logic-level clamping.
For BOM planning, this removes the last-time-buy risk and supports new-design qualification.