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Infineon Technologies BAS40E6433 — Discrete Semiconductors

BAS40E6433 Schottky Diode, 40 V, 120 mA, SOT-23-3

MPNBAS40E6433
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BAS40E6433 Schottky diode, 40 V DC reverse voltage, 120 mA average rectified current, 100 ps reverse recovery time, SOT-23-3 surface mount package.

$0.0700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BAS40E6433 specifications
ParameterValue
Diode typeSchottky
MountingSurface Mount
Voltage - DC reverse (Vr)40 V
Voltage - forward (Vf) (Max) @ if1 V @ 40 mA
Current - reverse leakage @ vr1 µA @ 30 V
Current - average rectified120mA
Operating temperature - junction-55°C~150°C
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageBulk
CaseTO-236-3, SC-59, SOT-23-3
Capacitance @ vr,5pF @ 0V, 1MHz
Reverse recovery time100 ps

Product details

Small-signal Schottky for rail clamping and fast switching

The BAS40E6433 is a 40 V, 120 mA Schottky diode in a standard SOT-23-3 surface-mount package. It is designed for low-voltage, high-speed switching applications where the Schottky's low forward drop and negligible reverse recovery time matter more than a higher current rating. Typical roles include reverse-polarity protection on low-current rails, flyback clamping across relay coils or small inductors, and signal-level rectification up into the VHF range.

The 40 V reverse voltage is the ceiling for the blocking voltage — keep the peak inverse voltage below that, and the diode stays off. The 120 mA average rectified current is the continuous forward current limit. That is a small-signal rating: it handles logic-level loads, sensor outputs, and gate-drive bootstrap circuits, but not a power supply output. If you need to switch a few hundred milliamps, this is the wrong part. The forward drop is 1 V maximum at 40 mA, which is typical for a Schottky of this die size — low enough to keep dissipation under control in a signal path, but not a sub-300 mV low-Vf Schottky.

100 ps reverse recovery — what that buys you

The 100 ps reverse recovery time is the Schottky's main advantage over a PN-junction diode. That means it can handle switching frequencies well into the MHz range without efficiency loss or ringing. If you are building a boost converter running at a few hundred kilohertz, or clamping the kickback from a fast-switching MOSFET half-bridge, the BAS40E6433 will not add a reverse-recovery tail that burns extra power or generates noise. The 5 pF junction capacitance at 0 V bias is low enough that it will not load a high-impedance node in an RF detector or a sample-and-hold front end.

SOT-23-3 footprint and sourcing reality

The BAS40E6433 comes in the industry-standard SOT-23-3 package (also known as TO-236-3 or SC-59).

Frequently asked questions

What package is BAS40E6433 in?

It comes in a SOT-23-3 surface-mount package, also specified as TO-236-3 or SC-59. The supplier device package is SOT-23-3.

What is the closest pin-compatible alternative to BAS40E6433?

Any SOT-23 Schottky diode with a 40 V or higher reverse voltage and a similar current rating (100–200 mA range) will be pin-compatible. Common alternatives include the BAT54 series (30 V, 200 mA) for lower voltage or the BAS70 series (70 V, 70 mA) for higher voltage. The BAS40E6433 sits in the middle with 40 V and 120 mA. Verify the forward voltage and capacitance if the application is sensitive to those parameters.