Schottky barrier diode, 40 V, 120 mA, SOT-23
The BAS40E6327HTSA1 is a 40 V, 120 mA Schottky barrier diode from Infineon in the standard SOT-23 surface-mount package (PG-SOT23). The 100 ps typical reverse recovery time (trr) means it handles fast switching edges in low-power rectification and clamping circuits without significant stored-charge delay. Junction temperature range spans -55°C to 150°C, covering industrial and automotive ambient conditions with margin for self-heating at the rated 120 mA average forward current.
Parametric profile for signal-chain and protection circuits
Forward voltage is 1 V maximum at 40 mA forward current — the knee voltage sits low enough for sub-100 mA rail clamping without excessive conduction loss. Reverse leakage is 1 µA maximum at 30 V reverse bias, which keeps the standing current in a protection clamp well below the microamp range until the trigger threshold is crossed. Capacitance measures 5 pF typical at 0 V reverse bias, 1 MHz — low enough to avoid loading high-frequency signal lines in RF detector or mixer applications.