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Infineon Technologies BAS40B5003 — Discrete Semiconductors

Infineon BAS40B5003 Schottky Diode, 40 V, 120 mA, AEC-Q101

MPNBAS40B5003
Active

Infineon BAS40B5003 Schottky diode, AEC-Q101 qualified, 40 V reverse voltage, 120 mA forward current, SOT-23-3 surface-mount package.

$0.0300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BAS40B5003 specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Diode typeSchottky
MountingSurface Mount
Voltage - DC reverse (Vr)40 V
Voltage - forward (Vf) (Max) @ if1 V @ 40 mA
Current - reverse leakage @ vr1 µA @ 30 V
Current - average rectified120mA
Operating temperature - junction150°C
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageBulk
CaseTO-236-3, SC-59, SOT-23-3
Capacitance @ vr,3pF @ 0V, 1MHz

Product details

Schottky diode in a SOT-23-3 for automotive and industrial switching

It handles a 40 V DC reverse voltage and rectifies up to 120 mA average forward current, with a forward voltage drop of 1 V at 40 mA. The diode's low junction capacitance — 3 pF at 0 V, 1 MHz — suits it for high-speed switching in signal and protection circuits.

The 120 mA forward current is a continuous average rating; peak repetitive currents can be higher if the duty cycle is low, but the 150°C junction temperature limit governs the thermal budget. The 1 µA reverse leakage at 30 V is typical for a small-signal Schottky — expect it to double every 10°C above 25°C junction, so budget leakage in high-temperature environments.

AEC-Q101 qualification and the sourcing angle

The lifecycle is listed as active, so no near-term end-of-life risk for production builds.

Frequently asked questions

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