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Infineon Technologies BAS4007WE6327BTSA1 — Discrete Semiconductors

Infineon BAS4007WE6327BTSA1 Schottky Diode, 40 V, 120 mA

MPNBAS4007WE6327BTSA1
Obsolete

Infineon BAS4007WE6327BTSA1 dual Schottky diode, 2 independent diodes, 40 V reverse voltage, 120 mA average rectified current per diode, 100 ps reverse recovery time, surface mount SC-82A/SOT-343 package, tape and reel.

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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BAS4007WE6327BTSA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
Voltage - DC reverse (Vr)40 V
Voltage - forward (Vf) (Max) @ if1 V @ 40 mA
Current - reverse leakage @ vr1 µA @ 30 V
Current - average rectified (Io) (per diode)120mA (DC)
Operating temperature - junction150°C (Max)
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR)
TechnologySchottky
CaseSC-82A, SOT-343
Diode configuration2 Independent
Reverse recovery time100 ps

Product details

Dual Schottky in a compact SOT-343

The Infineon BAS4007WE6327BTSA1 is a dual Schottky diode array with two independent diodes in a single SC-82A (SOT-343) surface-mount package. Each diode is rated for 40 V reverse voltage and 120 mA average rectified current, with a forward voltage drop of 1 V at 40 mA. The 100 ps reverse recovery time makes it suited for high-speed switching applications where Schottky's low stored charge matters — think clamping, OR-ing, or detector circuits in RF front-ends or high-frequency power conversion.

Obsolete — sourcing through independent distribution

Infineon lists the BAS4007WE6327BTSA1 as obsolete. No direct replacement part number is provided in the lifecycle record.

100 ps trr — what it buys you

The 100 ps reverse recovery time is the headline parameter here. For a small-signal Schottky, that figure means the diode can switch off extremely fast — useful in high-speed clamping, mixer, or detector stages where a slower PN-junction diode would introduce switching loss or signal distortion. The 1 µA reverse leakage at 30 V is typical for a 40 V Schottky; if your circuit runs hot, derate leakage accordingly since it doubles with temperature. The 150°C maximum junction temperature gives headroom for compact layouts with limited copper.

Frequently asked questions

Is BAS4007WE6327BTSA1 obsolete?

Yes, Infineon lists the BAS4007WE6327BTSA1 as obsolete.

What is the replacement for BAS4007WE6327BTSA1?

No official replacement is listed by Infineon. For new designs, evaluate current-production dual Schottky diodes in SOT-343 with similar 40 V / 120 mA ratings, but verify pin compatibility and electrical specs against your circuit.