What this Schottky array brings to a high-speed signal or protection rail
The BAS4006WH6327XTSA1 is a dual Schottky diode in a common-anode configuration, rated 40 V reverse and 120 mA DC per diode. The 100 ps reverse recovery time means it handles fast edges without the stored-charge tail of a PN-junction diode — useful for clamping, OR-ing, or steering in low-current signal paths where every nanosecond of recovery eats into the timing budget.
Ratings that decide the fit
Forward voltage is 1 V max at 40 mA — the Schottky barrier gives a lower Vf than a standard silicon diode at this current, which means less self-heating and a tighter forward drop for a signal-level OR-ing or steering application. Reverse leakage is 1 µA at 30 V, a figure that doubles with junction temperature but stays manageable for battery-powered sense circuits.
Package and rework reality
PG-SOT323 is a three-lead package with a body roughly 2.0 × 1.25 mm. The common-anode pinout means pin 1 is the anode shared by both diodes — a quick continuity check against the datasheet orientation mark confirms the part is landed correctly. The small body reflows cleanly with a standard 260 °C peak profile; the main risk is tombstoning if one pad sees a faster temperature ramp than the other.