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Infineon Technologies BAS40-07E6327 — Discrete Semiconductors

Infineon BAS40-07E6327 Schottky Diode, 40 V, 120 mA, SOT143

MPNBAS40-07E6327
Active

Infineon BAS40-07E6327 Schottky diode, dual independent configuration, 40 V reverse voltage, 120 mA average rectified current per diode, SOT143 surface-mount package, active lifecycle.

$0.1100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BAS40-07E6327 specifications
ParameterValue
Diode typeSchottky
MountingSurface Mount
Voltage - DC reverse (Vr)40 V
Voltage - forward (Vf) (Max) @ if1 V @ 40 mA
Current - reverse leakage @ vr1 µA @ 30 V
Current - average rectified (Io) (per diode)120mA (DC)
Operating temperature - junction150°C
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageBulk
CaseTO-253-4, TO-253AA
Diode configuration2 Independent

Product details

Dual Schottky in a single SOT143 footprint

The Infineon BAS40-07E6327 is a dual Schottky diode with two independent junctions in one SOT143 (SC-61) surface-mount package. Each diode is rated for a maximum reverse voltage of 40 V and an average rectified current of 120 mA DC. The forward voltage drop is specified at 1 V maximum when forward current is 40 mA. Reverse leakage is 1 µA at 30 V. This configuration saves board space compared to two discrete SOD-123 or SOD-323 diodes, and the SOT143 footprint is common for small-signal switching and protection arrays.

The 40 V reverse voltage rating covers most 12 V and 24 V supply rails with margin, including automotive battery-line transients that can reach 36 V. Each diode handles 120 mA average rectified current, so the pair can serve as a full-wave rectifier for a 240 mA DC load, or as two independent steering diodes for 120 mA each. The 1 V forward drop at 40 mA is typical for a small-signal Schottky — lower than a standard silicon diode, which keeps power dissipation down in low-current rectification and OR-ing applications.

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