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Infineon Technologies BAS40-05B5000 — Discrete Semiconductors
Infineon Technologies

BAS40-05B5000 SiC Schottky Diode, 40V, 120mA, SOT-23

MPNBAS40-05B5000
Active

Infineon BAS40-05B5000 Silicon Carbide Schottky diode, 1 Pair Common Cathode, 40 V reverse, 120 mA average rectified, 0 ns reverse recovery time, Surface Mount SOT-23-3 package, Active.

$0.0300Ref. price · indicative, final on quote
BAS40-05B5000 datasheet
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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Specifications

BAS40-05B5000 Technical Specifications
ParameterValue
Diode typeSilicon Carbide Schottky
Mounting typeSurface Mount
Voltage - DC reverse (Vr)40 V
Voltage - forward (Vf) (Max) @ if1 V @ 40 mA
Current - reverse leakage @ vr1 µA @ 30 V
Current - average rectified (Io) (per diode)120mA (DC)
Operating temperature - junction150°C
SpeedNo Recovery Time > 500mA (Io)
PackageBulk
CaseTO-236-3, SC-59, SOT-23-3
Diode configuration1 Pair Common Cathode
Reverse recovery time0 ns

Product details

Zero-recovery Schottky for high-frequency clamping

The BAS40-05B5000 is an Infineon Silicon Carbide Schottky diode pair in a common-cathode configuration, rated for 40 V reverse and 120 mA average rectified current per diode. Its zero reverse recovery time eliminates the switching loss tail that plagues PN-junction diodes in high-frequency rectification and snubber circuits.

SOT-23 dual diode — footprint and thermal budget

Housed in a standard SOT-23-3 (PG-SOT23) package, the common-cathode pair shares the centre pin as the cathode common. The junction temperature rating is 150°C.

Forward drop and leakage at operating point

Forward voltage max is 1 V at 40 mA forward current; reverse leakage is 1 µA at 30 V reverse.

Frequently asked questions

What is the reverse recovery time of BAS40-05B5000?

The reverse recovery time (trr) is 0 ns — a Schottky diode has no stored charge, so it switches off instantly. This makes it suitable for high-frequency rectification above 100 kHz where PN-diode recovery losses would dominate.