BAS3005B02VH6327XTSA1

Infineon Technologies

Infineon BAS3005B02VH6327XTSA1 Schottky diode, 30V DC reverse voltage, 500mA average rectified current, fast recovery ≤500ns, 620mV forward voltage, SC-79/SOD-523 surface mount, -55°C to 125°C junction temperature.

Infineon Technologies BAS3005B02VH6327XTSA1
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MOQ 2 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BAS3005B02VH6327XTSA1 specifications
Parameter / AttributeSpecification / Value
Diode typeSchottky
MountingSurface Mount
Voltage - DC reverse (Vr)30 V
Voltage - forward (Vf) (Max) @ if620 mV @ 500 mA
Current - reverse leakage @ vr25 µA @ 30 V
Current - average rectified500mA
Operating temperature - junction-55°C ~ 125°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-79, SOD-523
Capacitance @ vr,10pF @ 5V, 1MHz

Technical details

Schottky rectifier for low-voltage, high-speed switching

The Infineon BAS3005B02VH6327XTSA1 is a 30V, 500mA Schottky diode in a SC-79 / SOD-523 surface-mount package. Its fast recovery time — ≤500ns at >200mA — makes it suitable for high-frequency rectification, freewheeling, and snubbing in DC-DC converters and power management circuits. The low forward voltage of 620mV at 500mA keeps conduction losses down in low-voltage rails.

The SC-79 / SOD-523 footprint is a common small-signal diode land pattern; the supplier device code is PG-SC79-2. Reverse leakage is 25µA at 30V, and junction capacitance is 10pF at 5V, 1MHz — low enough to avoid loading high-frequency signal lines.

ROHS3 compliant, no exemptions.

BAS3005B02VH6327XTSA1
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