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Infineon Technologies BAS16WH6327XTSA1 — Discrete Semiconductors

Infineon BAS16WH6327XTSA1 Fast Switching Diode, 4 ns trr

MPNBAS16WH6327XTSA1
Last Buy

Infineon BAS16 series BAS16WH6327XTSA1, Diode Standard 80 V 250mA Surface Mount PG-SOT323, Fast Recovery <= 500ns, > 200mA (Io).

$0.0474Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BAS16WH6327XTSA1 specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)80 V
Voltage - forward (Vf) (Max) @ if1.25 V @ 150 mA
Current - reverse leakage @ vr1 µA @ 75 V
Current - average rectified250mA
Operating temperature - junction150°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR)
TechnologyStandard
CaseSC-70, SOT-323
Capacitance @ vr,2pF @ 0V, 1MHz
Reverse recovery time4 ns

Product details

80 V, 250 mA signal diode with 4 ns recovery

The 2 pF capacitance at 0 V (measured at 1 MHz) keeps loading light on high-speed digital lines.

That means the manufacturer has announced end-of-life and is accepting final orders within a defined window. Once that window closes, the part will no longer be available through the factory channel. For a BOM line using this diode, the decision is immediate: place the last-time-buy quantity or qualify a replacement before supply tightens. The replacement path is either a pin-compatible sibling in the same BAS16 family — the BAS16WH6327 (without the XTSA1 suffix) is a natural candidate to evaluate — or a functionally equivalent fast-switching diode from another manufacturer in the SC-70 footprint. The 4 ns trr and 80 V / 250 mA envelope are common across multiple suppliers' signal diode lines, so a cross is feasible but requires bench validation of capacitance and leakage at the operating point.

SC-70 footprint and the 150 °C junction ceiling

The PG-SOT323 package (SC-70, SOT-323 variant) is a three-lead surface-mount package with a 1.3 mm body width. The 150 °C maximum junction temperature is the thermal limit — in a 85 °C ambient, the 250 mA forward current at 1.25 V forward drop (at 150 mA) produces about 190 mW dissipation, which keeps the junction rise within bounds with standard PCB copper. The 1 µA reverse leakage at 75 V is typical for a small-signal silicon diode at room temperature; leakage doubles roughly every 10 °C rise, so budget headroom if the junction runs hot.

Frequently asked questions

Is BAS16WH6327XTSA1 obsolete?

Yes — the lifecycle status is Last Buy, meaning the manufacturer has discontinued production and is accepting final orders within a limited window. After that window, the part will not be available through the factory channel. Sourcing now requires independent distribution or a last-time-buy commitment.

What is the replacement for BAS16WH6327XTSA1?

No official successor is listed on the lifecycle record. The closest pin-compatible candidate in the same family is the BAS16WH6327 (without the XTSA1 suffix), which shares the same BAS16 die and SC-70 package. For a functional replacement, any fast-switching signal diode rated 80 V / 250 mA with 4 ns trr in an SC-70 footprint should be evaluated — several manufacturers offer parts that meet this envelope, but capacitance and leakage at your operating point must be verified.

What are the specifications of BAS16WH6327XTSA1?

It is a standard silicon switching diode rated 80 V reverse voltage (max), 250 mA average rectified current, with a 4 ns reverse recovery time. Forward voltage is 1.25 V max at 150 mA. Reverse leakage is 1 µA at 75 V. Junction capacitance is 2 pF at 0 V, 1 MHz. Operating junction temperature is 150 °C max. Package is SC-70 / SOT-323 (PG-SOT323), surface mount.