Infineon BAS16WH6327 fast switching diode, 80 V reverse voltage, 250 mA average rectified current, 4 ns reverse recovery time, SOT-323 surface mount package.
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 80 V |
| Voltage - forward (Vf) (Max) @ if | 1.25 V @ 150 mA |
| Current - reverse leakage @ vr | 1 µA @ 75 V |
| Current - average rectified | 250mA |
| Operating temperature - junction | 150°C (Max) |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Bulk |
| Technology | Standard |
| Case | SC-70, SOT-323 |
| Capacitance @ vr, | 2pF @ 0V, 1MHz |
| Reverse recovery time | 4 ns |
Its 4 ns reverse recovery time makes it a solid choice for high-frequency rectification, snubbing, and general-purpose switching up to the Vr and Io limits. The SOT-323 footprint is small enough for dense layouts but still hand-solderable for rework.
The 1.25 V forward drop at 150 mA is typical for a 250 mA-rated silicon diode.
It is a current-production Infineon part, available through independent distribution. No imminent obsolescence risk for new designs.
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