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Infineon Technologies BAS16WE6327 — Discrete Semiconductors

Infineon BAS16WE6327 Fast Switching Diode, 4 ns trr, 80 V

MPNBAS16WE6327
Active

Infineon BAS16WE6327 standard switching diode, 80 V reverse voltage, 250 mA average rectified current, 4 ns reverse recovery time, SC-70/SOT-323 package, surface mount.

$0.0200Ref. price · indicative, final on quote
Infineon Technologies BAS16WE6327 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BAS16WE6327 specifications
ParameterValue
SeriesBAS16
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)80 V
Voltage - forward (Vf) (Max) @ if1.25 V @ 150 mA
Current - reverse leakage @ vr1 µA @ 75 V
Current - average rectified250mA
Operating temperature - junction150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageBulk
CaseSC-70, SOT-323
Capacitance @ vr,2pF @ 0V, 1MHz
Reverse recovery time4 ns

Product details

The 1.25 V forward drop at 150 mA is typical for a small-signal silicon diode in this class.

Package and rework — SC-70 / SOT-323

Housed in a three-lead SC-70 / SOT-323 package (Infineon calls it PG-SOT323-3-1), this is a tiny surface-mount part — about 2 mm by 1.25 mm. It reflows fine with a standard profile, and a skilled tech can hand-solder it with tweezers and a fine iron tip. The 2 pF junction capacitance at 0 V means it won't load down fast edges.

Infineon lists the BAS16WE6327 as Active.

Frequently asked questions

What is the reverse recovery time of BAS16WE6327?

The reverse recovery time (trr) is 4 ns, making it suitable for fast-switching applications.