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BAS16SH6727XTSA1

Infineon BAS16SH6727XTSA1 Standard Diode, 80 V, 200 mA

MPNBAS16SH6727XTSA1
Obsolete

Infineon BAS16SH6727XTSA1 standard switching diode, 80 V reverse voltage, 200 mA average rectified current per diode, 4 ns reverse recovery time, 3 independent diodes, PG-SOT363-PO package.

$0.0942Ref. price · indicative, final on quote
Infineon Technologies BAS16SH6727XTSA1 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BAS16SH6727XTSA1 specifications
ParameterValue
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)80 V
Voltage - forward (Vf) (Max) @ if1.25 V @ 150 mA
Current - reverse leakage @ vr1 µA @ 75 V
Current - average rectified (Io) (per diode)200mA (DC)
Operating temperature - junction150°C(Max)
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR)
Case6-VSSOP, SC-88, SOT-363
Diode configuration3 Independent
Reverse recovery time4 ns

Product details

Three fast switching diodes in one SOT-363

The 4 ns reverse recovery time makes this part suited for high-speed signal clamping, snubbing, and protection circuits where fast turn-off is needed to limit overshoot.

80 V blocking, 200 mA forward — what the ratings mean

With 80 V DC reverse voltage and 1.25 V forward drop at 150 mA, each diode handles typical low-power rail protection and logic-level signal switching without exceeding the junction temperature limit of 150 °C. The 1 µA reverse leakage at 75 V is low enough to avoid loading high-impedance nodes in battery-powered or precision analog circuits.

Frequently asked questions

What is the reverse recovery time of BAS16SH6727XTSA1?

The reverse recovery time is 4 ns, making it suitable for high-speed switching applications.

What package does BAS16SH6727XTSA1 come in?

It comes in a PG-SOT363-PO package, which is a 6-pin SOT-363 (SC-88) surface-mount package.