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Infineon Technologies BAS16-03WE6327 — Discrete Semiconductors

Infineon BAS16-03WE6327 Standard Diode, 80 V, 250 mA

MPNBAS16-03WE6327
Active

Infineon BAS16 series standard switching diode, 80 V reverse voltage, 250 mA average rectified current, 4 ns reverse recovery time, surface-mount SOD-323 (PG-SOD323-2-1) package.

$0.3900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BAS16-03WE6327 specifications
ParameterValue
SeriesBAS16
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)80 V
Voltage - forward (Vf) (Max) @ if1.25 V @ 150 mA
Current - reverse leakage @ vr1 µA @ 75 V
Current - average rectified250mA
Operating temperature - junction150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageBulk
CaseSC-76, SOD-323
Capacitance @ vr,2pF @ 0V, 1MHz
Reverse recovery time4 ns

Product details

4 ns trr — the spec that decides the fit

Its 4 ns reverse recovery time is the headline parameter — fast enough for snubbing, high-speed switching, and signal clamping in circuits where a general-purpose 1N4148's 4 ns trr is the benchmark, but this part delivers it in a smaller SOD-323 footprint. Forward voltage drops to 1.25 V at 150 mA, and reverse leakage holds at 1 µA at 75 V, so it suits low-power rectification and protection roles where leakage budget is tight.

SOD-323 footprint, active lifecycle

Packaged in PG-SOD323-2-1 (SOD-323), this is a standard small-signal diode footprint shared across the BAS16 family and many competitors. The 2 pF capacitance at 0 V, 1 MHz keeps loading light on high-speed signal lines.

Frequently asked questions

What is the reverse recovery time of BAS16-03WE6327?

The reverse recovery time (trr) is 4 ns, which qualifies it as a fast recovery diode for switching applications up to several hundred kilohertz.