RF PIN diode for antenna switching and attenuators
The Infineon BAR6405E6327HTSA1 is a silicon PIN diode configured as a common-cathode pair in a PG-SOT23-3 package. It is designed for RF switching and attenuation up to several gigahertz, where low capacitance and low forward resistance matter. Key RF parametrics: 0.35 pF capacitance at 20 V reverse bias and 1 MHz, and 1.35 Ohm series resistance at 100 mA forward current and 100 MHz. The 150 V peak reverse voltage gives headroom for transmit/receive switching in power amplifiers. Maximum forward current is 100 mA; power dissipation is 250 mW. Junction temperature rating is 150 °C, suitable for RF front-end environments with moderate heat.
SOT-23 rework — fine-tip friendly
The PG-SOT23-3 package (TO-236-3 / SC-59 equivalent) is hand-solderable with a fine-tip iron; no hot-air station required. The three-pin footprint fits standard SOT-23 land patterns. The small body keeps parasitic inductance low — important for maintaining RF performance above 1 GHz.