What this RF PIN diode is and where it fits
The Infineon BAR6306E6327HTSA1 is a silicon PIN diode configured as a single common-anode pair in a PG-SOT23 package. It is designed for RF switching, attenuation, and limiter circuits up to several gigahertz. The 0.3 pF capacitance at 5 V and 1 ohm series resistance at 10 mA, 100 MHz make it suitable for low-insertion-loss, high-isolation paths in wireless infrastructure, test equipment, and antenna tuning networks.
Ratings that drive the BOM decision
The 50 V peak reverse voltage sets the RF power handling limit — stay below that for reliable switching. The 1 ohm resistance at 10 mA forward bias means you get low series loss in the on-state; at lower bias currents the resistance rises, so plan your bias network accordingly. The 0.3 pF capacitance at 5 V reverse bias gives good off-state isolation. Maximum continuous current is 100 mA; power dissipation tops out at 250 mW, so thermal derating matters in dense layouts.
Lifecycle and sourcing reality
This part carries an Active lifecycle status and is ROHS3 compliant. No end-of-life notice or last-time-buy schedule is in effect.