The Infineon BAR6306E6327HTSA1 is a silicon PIN diode configured as a single common-anode pair in a PG-SOT23 package. It is designed for RF switching, attenuation, and limiter circuits up to several gigahertz. The 0.3 pF capacitance at 5 V and 1 ohm series resistance at 10 mA, 100 MHz make it suitable for low-insertion-loss, high-isolation paths in wireless infrastructure, test equipment, and antenna tuning networks.
Ratings that drive the BOM decision
The 50 V peak reverse voltage sets the RF power handling limit — stay below that for reliable switching. The 1 ohm resistance at 10 mA forward bias means you get low series loss in the on-state; at lower bias currents the resistance rises, so plan your bias network accordingly. The 0.3 pF capacitance at 5 V reverse bias gives good off-state isolation. Maximum continuous current is 100 mA; power dissipation tops out at 250 mW, so thermal derating matters in dense layouts.