The AUIRLR3705ZTRL is a 55 V, 42 A N-channel MOSFET from Infineon's HEXFET® line, in a DPAK (TO-252) surface-mount package. The 8 mOhm Rds(on) at 10 V gate drive is the number that sets the conduction loss — at 42 A that's about 14 W of dissipation before you even switch, so the thermal pad on the DPAK needs a decent copper pour to keep the junction under 175 °C.
66 nC gate charge — easy to drive, moderate speed
Gate charge is 66 nC at 5 V. That is low enough that a standard gate driver IC or even a discrete totem-pole can push it through a few tens of kHz without the driver heating up. The 3 V threshold at 250 µA means it will turn on cleanly with 5 V logic, but you want a solid 10 V gate drive to hit that 8 mOhm Rds(on) figure.
Junction temperature range -55 to 175 °C
The junction is rated from -55 to 175 °C. That is the full automotive temperature grade — it survives under-hood heat soak and cold cranking. For a 130 W power dissipation ceiling, the limiting factor is the board's ability to pull heat out of the DPAK tab, not the silicon itself.
Active production — no LTB worry
It is a current-production part that can be quoted for both prototype and production volumes through the independent channel.