Infineon AUIRLR3410TR, N-Channel HEXFET power MOSFET, 100 V drain-source, 17 A continuous drain current, 105 mOhm Rds(on) at 10 V, 34 nC gate charge, -55°C to 175°C junction temperature, surface mount.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Operating temperature high | -55°C to 175°C(TJ) |
| Vgs | ±16 V |
| Power | 79.0 |
| Package_type | Bulk |
| Capacitance_uf | 0.0008 |
| Status | Active |
| Supply voltage | 100.0 |
| Vgs(Th) (Max) @ id | 2 V @ 250µA |
| Switching current | 17.0 |
| Rds on (Max) @ id, vgs | 105mOhm @ 10 A, 10 V |
| Gate charge (Qg) (Max) @ vgs | 34 nC @ 5 V |
It switches loads up to 79 W, with an on-resistance of 105 mOhm at 10 V gate drive and 10 A drain current. The gate charge is 34 nC at 5 V.
That makes it suitable for both new-design qualification and production replenishment.
The maximum on-resistance is 105 mOhm at 10 A drain current with a 10 V gate drive.
The IRFR3410 is a functionally similar N-channel MOSFET in the same package outline, but the AUIRLR3410TR carries the automotive-grade temperature range (-55°C to 175°C) and HEXFET process. Verify the Rds(on) and gate charge against your design before substituting.
The AUIRLR3410TR is the automotive-qualified version of the IRFR3410, with the same 100 V, 17 A ratings and similar Rds(on). The key difference is the extended junction temperature range to 175°C. Pin-compatible for drop-in replacement in most layouts.