55 V, 16 A N-channel HEXFET — under-hood ready
The Infineon AUIRLR024Z is an automotive-grade N-channel HEXFET MOSFET rated for 55 V drain-source and 16 A continuous drain current, built on the HEXFET trench technology that delivers low on-resistance and fast switching.
The gate threshold voltage is 3 V maximum at 250 µA drain current, which means a 5 V logic-level gate driver will turn the FET on hard, but a 3.3 V GPIO may not fully enhance the channel — budget a gate driver with 5 V or higher output. Total gate charge is 9.9 nC at 5 V gate drive, so a driver delivering 1 A peak can switch the FET in under 10 ns — fast enough for 100 kHz+ PWM in a DC-DC converter, but mind the Miller plateau ringing if the gate loop is long. The absolute maximum gate-source voltage is ±16 V; exceeding that risks gate-oxide punch-through, especially on a long gate trace where parasitic inductance can cause overshoot. Keep the gate drive clean and within 10 V to 12 V for best margin.