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AUIRLR024NTRL

AUIRLR024NTRL N-Channel MOSFET, 55V 17A DPAK, HEXFET

MPNAUIRLR024NTRL
Active

Infineon HEXFET series AUIRLR024NTRL, N-channel MOSFET, 55V Vds, 17A switching current, 65mOhm Rds(on) at 10V, DPAK surface mount, -55°C to 175°C junction temperature.

$0.60Ref. price · indicative, final on quote
Infineon Technologies AUIRLR024NTRL datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

AUIRLR024NTRL specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Operating temperature high-55°C to 175°C(TJ)
Vgs±16 V
Power45.0
Package_typeBulk
Capacitance_uf0.0005
StatusActive
Supply voltage55.0
Vgs(Th) (Max) @ id2 V @ 250µA
Switching current17.0
Rds on (Max) @ id, vgs65mOhm @ 10 A, 10 V
Gate charge (Qg) (Max) @ vgs15 nC @ 5 V

Product details

55V, 17A N-channel HEXFET in DPAK

It is specified with a maximum on-resistance of 65 mOhm at Vgs=10V and Id=10A, and a gate charge of 15 nC at Vgs=5V — numbers that define the conduction and switching losses for a given duty cycle and frequency.

Junction temperature and operating envelope

With a maximum gate threshold voltage of 2 V at 250 µA and a ±16 V gate-source rating, the AUIRLR024NTRL is compatible with 5 V and 3.3 V logic-level gate drivers. The 15 nC total gate charge at 5 V means a driver sourcing 1 A can switch the gate in about 15 ns — fast enough for PWM frequencies in the tens of kHz without excessive cross-conduction.

Frequently asked questions

What is the AUIRLR024NTRL's on-resistance at the typical operating point?

Maximum Rds(on) is 65 mOhm at Vgs=10V and Id=10A. This is the value to use for conduction loss calculations at the rated current; actual on-resistance will be higher at elevated junction temperature per the normalized curve in the datasheet.

Is the AUIRLR024NTRL automotive qualified?

Verify the specific qualification level with the manufacturer for your application.