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Infineon Technologies AUIRLL024NTR-IR — Discrete Semiconductors

AUIRLL024NTR-IR N-Channel MOSFET, 55 V, 3.1 A, HEXFET

MPNAUIRLL024NTR-IR
Active

Infineon HEXFET® AUIRLL024NTR-IR, N-Channel automotive power MOSFET, 55 V drain-source, 3.1 A switching current, 65 mOhm Rds(on) max at 10 V, -55°C to 150°C TJ, surface mount.

$0.57Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

AUIRLL024NTR-IR specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Operating temperature high-55°C to 150°C(TJ)
Vgs±16 V
Power1.0
Package_typeBulk
Capacitance_uf0.0005
StatusActive
Supply voltage55.0
Vgs(Th) (Max) @ id2 V @ 250µA
Switching current3.1
Rds on (Max) @ id, vgs65mOhm @ 3.1 A, 10 V
Gate charge (Qg) (Max) @ vgs15.6 nC @ 5 V

Product details

Automotive-grade N-channel switch for 55 V rails

The Infineon AUIRLL024NTR-IR is a HEXFET® N-channel power MOSFET rated for 55 V drain-source and 3.1 A switching current, built for automotive power distribution and load switching.

Gate threshold voltage is 2 V max at 250 µA drain current — the turn-on edge is defined by the driver's pull-up strength, not the FET's threshold spread. Total gate charge is 15.6 nC at 5 V gate drive, which keeps the switching loss manageable for a 3.1 A load at moderate PWM frequencies (1–20 kHz typical for automotive loads). The ±16 V maximum gate-source rating gives headroom for unregulated charge-pump drivers or bootstrap supplies that overshoot during load dumps.

Frequently asked questions

What is the Vgs threshold of AUIRLL024NTR-IR?

The maximum gate threshold voltage is 2 V at 250 µA drain current — a standard logic-level gate drive will turn it on fully.