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Infineon Technologies AUIRL2203N — Discrete Semiconductors
Infineon Technologies

AUIRL2203N N-Channel HEXFET, 7mOhm Rds(on), 175°C Tj

MPNAUIRL2203N
Active

Infineon HEXFET® AUIRL2203N, automotive N-channel MOSFET, 30 V drain-source, 75 A switching current, 7 mOhm Rds(on) max at 60 A / 10 V, 60 nC gate charge at 4.5 V, -55°C to 175°C Tj, through-hole package.

$1.00Ref. price · indicative, final on quote
AUIRL2203N datasheet
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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Specifications

AUIRL2203N Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting_typeThrough Hole
Operating temperature high-55°C to 175°C(TJ)
Vgs±16 V
Power_w180.0
Package_typeBulk
Capacitance_uf0.0033
Product_statusActive
Supply_voltage_v30.0
Vgs(Th) (Max) @ id1 V @ 250µA
Switching_current_a75.0
Rds on (Max) @ id, vgs7mOhm @ 60 A, 10 V
Gate charge (Qg) (Max) @ vgs60 nC @ 4.5 V

Product details

7 mOhm Rds(on) at 60 A — conduction loss floor

The AUIRL2203N is an Infineon HEXFET N-channel MOSFET rated for 30 V drain-source with a switching current of 75 A. Its on-resistance is specified at 7 mOhm maximum at 60 A drain current and 10 V gate drive — this is the conduction loss per amp, not a typical value. At 60 A the dissipation is 25.2 W (I²R) before you factor in the positive temperature coefficient of Rds(on). The 180 W rated power gives the thermal budget headroom for a heatsink in a continuous-load design.

Logic-level gate: 60 nC at 4.5 V

The gate charge is 60 nC at 4.5 V, which means a 5 V microcontroller GPIO can drive this FET into the ohmic region without a separate gate driver IC. The threshold voltage is 1 V max at 250 µA — the device is fully enhanced by 3.3 V logic, though Rds(on) is specified at 10 V for the guaranteed minimum. For a 20 kHz PWM load, the gate drive current is 1.2 mA (Qg × fsw), well within the output capability of a standard MCU pin.

175°C junction — under-hood automotive grade

The operating junction temperature range is -55°C to 175°C, which qualifies the AUIRL2203N for engine-bay and transmission-control environments where ambient temps exceed 125°C. The AUTOMOTIVE N-CHANNEL designation in the part title points to AEC-Q101 qualification and the production-part-approval process (PPAP) documentation that Tier-1 automotive buyers require. The through-hole package (TO-220AB style) suits bolted-down heatsink mounting on a power board.

The product status is Active. No last-time-buy notice or end-of-life window has been issued.

Frequently asked questions

What is the AUIRL2203N Rds(on) value?

The maximum Rds(on) is 7 mOhm at 60 A drain current and 10 V gate drive. This is the guaranteed ceiling at 25°C junction temperature; the actual on-resistance increases with temperature per the normalized curve in the datasheet.

What is the AUIRL2203N gate charge?

The total gate charge is 60 nC at 4.5 V gate-source voltage. This low Qg enables direct drive from a 5 V microcontroller GPIO without a dedicated gate driver for switching frequencies up to several tens of kHz.

Does AUIRL2203N have an equivalent or replacement?

No pin-compatible second-source or official successor is listed on the record. For a dual-sourcing review, compare the 7 mOhm Rds(on) at 60 A / 10 V and 60 nC gate charge at 4.5 V against other TO-220 automotive N-channel FETs with a 175°C Tj rating.