Through-hole power switch for 55 V rails
The Infineon AUIRFZ44Z is an N-channel enhancement-mode MOSFET from the HEXFET® series, housed in a TO-220 through-hole package.
Gate drive and switching loss budget
The gate threshold is 4 V maximum at 250 µA, but the on-resistance is specified at Vgs = 10 V — a 10 V gate drive is needed to reach the rated 13.9 mOhm. Total gate charge is 43 nC at 10 V, so a driver sourcing 1 A can switch the gate in about 43 ns, not accounting for driver and layout parasitics. Absolute maximum gate-source voltage is ±20 V, so the gate drive must be clamped if the supply rail exceeds 20 V.
175 °C junction — thermal headroom for harsh environments
The 175 °C ceiling provides derating margin compared to 150 °C-rated devices. Power dissipation is rated at 80 W; the TO-220 package with a proper heatsink can handle the thermal load at full current if the duty cycle and ambient are managed.
