Infineon HEXFET® AUIRFZ44VZS, N-Channel MOSFET, 60 V, 57 A, 12 mOhm Rds(on) at 10 V, D2PAK surface mount, -55°C to 175°C junction.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Operating temperature high | -55°C to 175°C(TJ) |
| Vgs | ±20 V |
| Power | 92.0 |
| Package_type | Bulk |
| Capacitance_uf | 0.0017 |
| Status | Active |
| Supply voltage | 60.0 |
| Vgs(Th) (Max) @ id | 4 V @ 250µA |
| Switching current | 57.0 |
| Rds on (Max) @ id, vgs | 12mOhm @ 34 A, 10 V |
| Gate charge (Qg) (Max) @ vgs | 65 nC @ 10 V |
The AUIRFZ44VZS is an Infineon HEXFET N-channel power MOSFET rated for 60 V drain-source breakdown and 57 A continuous drain current in the D2PAK surface-mount package. At a 175 °C junction temperature, expect the on-resistance to roughly double, so budget the conduction loss for the hot case, not the cold spec.
Total gate charge is 65 nC at Vgs = 10 V.
The AUIRFZ44VZS is the automotive-qualified variant of the IRFZ44VZS. The electrical specifications — 60 V, 57 A, 12 mOhm Rds(on), 65 nC gate charge — are the same, but the AUIRFZ44VZS carries the extended -55°C to 175°C junction temperature range suited for automotive under-hood environments.