60 V, 57 A N-channel in D2PAK
The AUIRFZ44VZS is an Infineon HEXFET N-channel power MOSFET rated for 60 V drain-source breakdown and 57 A continuous drain current in the D2PAK surface-mount package. At a 175 °C junction temperature, expect the on-resistance to roughly double, so budget the conduction loss for the hot case, not the cold spec.
Gate charge and switching loss
Total gate charge is 65 nC at Vgs = 10 V. For a hard-switched converter at 100 kHz, the average gate drive current needed is 6.5 mA — well within a standard driver's capability, but the peak current during the Miller plateau determines the transition time and crossover loss.