Skip to main content
Infineon Technologies AUIRFZ44N — Discrete Semiconductors

Infineon AUIRFZ44N N-Channel MOSFET, 55V, 49A, TO-220

MPNAUIRFZ44N
Active

Infineon Technologies HEXFET® series, AUIRFZ44N N-Channel MOSFET, Through Hole, TO-220, 55 V, 49 A, 17.5 mOhm Rds(on), Bulk.

$0.87Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

AUIRFZ44N specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power94.0
Package_typeBulk
Capacitance_uf0.0015
StatusActive
Supply voltage55.0
Vgs(Th) (Max) @ id4 V @ 250µA
Switching current49.0
Rds on (Max) @ id, vgs17.5mOhm @ 25 A, 10 V
Gate charge (Qg) (Max) @ vgs63 nC @ 10 V

Product details

The AUIRFZ44N is an N-Channel power MOSFET from Infineon's automotive-grade HEXFET series, housed in a through-hole TO-220 package and supplied in bulk.

Gate drive and switching performance

Total gate charge is 63 nC at 10 V — the driver must supply this charge per switching cycle; at 50 kHz the average gate drive current is 3.15 mA, well within a standard gate driver's capability. Maximum gate-source voltage is ±20 V, and the threshold voltage is 4 V at 250 µA drain current — the logic-level drive margin is tight; a 5 V gate signal barely exceeds the threshold at cold temperature. Input capacitance is 1500 pF (0.0015 µF) — this sets the switching speed ceiling alongside the gate resistance and driver source/sink current.

Frequently asked questions

What is the AUIRFZ44N's maximum Rds(on) and at what test condition?

The maximum Rds(on) is 17.5 mOhm, specified at a drain current of 25 A and a gate-source voltage of 10 V.

What is the AUIRFZ44N's gate charge and why does it matter?

Total gate charge is 63 nC at 10 V. This value determines the gate drive current required at a given switching frequency — higher gate charge increases driver power loss and limits switching speed.