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AUIRFZ24NSTRL

Infineon AUIRFZ24NSTRL N-Channel MOSFET, 55V 17A DPAK

MPNAUIRFZ24NSTRL
Active

Infineon HEXFET® AUIRFZ24NSTRL, N-Channel MOSFET, 55 V drain-source, 17 A continuous drain current, 70 mOhm Rds(on) at 10 V, DPAK surface-mount package, -55°C to 175°C junction temperature.

$1.10Ref. price · indicative, final on quote
Infineon Technologies AUIRFZ24NSTRL datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

AUIRFZ24NSTRL specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power3.8
Package_typeBulk
Capacitance_uf0.0004
StatusActive
Supply voltage55.0
Vgs(Th) (Max) @ id4 V @ 250µA
Switching current17.0
Rds on (Max) @ id, vgs70mOhm @ 10 A, 10 V
Gate charge (Qg) (Max) @ vgs20 nC @ 10 V

Product details

HEXFET N-channel, 55 V, 17 A — DPAK switching MOSFET

The Infineon AUIRFZ24NSTRL is an N-channel enhancement-mode HEXFET MOSFET in a DPAK surface-mount package, rated for 55 V drain-source breakdown and 17 A continuous drain current. It is designed for high-efficiency switching in DC-DC converters, motor drives, and load-switching applications where the DPAK footprint keeps the board compact.

On-resistance and gate drive — the bench numbers

The Rds(on) is specified at 70 mOhm maximum when driven with 10 V on the gate at 10 A drain current. The gate threshold is 4 V max at 250 µA. Total gate charge is 20 nC at 10 V. The ±20 V Vgs absolute maximum gives headroom for inductive-load ringing on the gate node.

Thermal range and package reality

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