HEXFET N-channel, 55 V, 17 A — DPAK switching MOSFET
The Infineon AUIRFZ24NSTRL is an N-channel enhancement-mode HEXFET MOSFET in a DPAK surface-mount package, rated for 55 V drain-source breakdown and 17 A continuous drain current. It is designed for high-efficiency switching in DC-DC converters, motor drives, and load-switching applications where the DPAK footprint keeps the board compact.
On-resistance and gate drive — the bench numbers
The Rds(on) is specified at 70 mOhm maximum when driven with 10 V on the gate at 10 A drain current. The gate threshold is 4 V max at 250 µA. Total gate charge is 20 nC at 10 V. The ±20 V Vgs absolute maximum gives headroom for inductive-load ringing on the gate node.
Thermal range and package reality
The DPAK package dissipates 3.8 W in still air; for continuous 17 A operation the copper pad on the PCB must be sized to keep the junction below 175°C — the datasheet's thermal resistance numbers are the layout guide.