40 V, 100 A N-channel HEXFET — conduction loss and switching profile
The AUIRFU8403 is an Infineon HEXFET N-channel power MOSFET rated for 40 V drain-source and 100 A continuous drain current.
175 °C junction — where this part lives
This matters for designs that see sustained high ambient temperatures — motor drives, engine bay electronics, or industrial power supplies where the heatsink is shared with other hot components.
Gate charge and drive budget
Total gate charge is 99 nC at Vgs = 10 V. For a 100 A-rated device this is a moderate figure — it means the gate driver needs to supply about 99 nC per switching cycle. At 100 kHz switching frequency the average gate drive current is roughly 9.9 mA, which most dedicated MOSFET drivers can handle without external boost.