Skip to main content
Infineon Technologies AUIRFU8401 — Discrete Semiconductors
Infineon Technologies

AUIRFU8401 MOSFET N-CH 40V 100A I-PAK, Active

MPNAUIRFU8401
Active

Infineon AUIRFU8401, HEXFET series, N-channel MOSFET, 40 V, 100 A, 4.25 mOhm Rds(on) at 60 A, I-PAK through-hole package, -55°C to 175°C junction temperature.

$0.61Ref. price · indicative, final on quote
AUIRFU8401 datasheet
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

AUIRFU8401 Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting_typeThrough Hole
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power_w79.0
Package_typeBulk
Capacitance_uf0.0022
Product_statusActive
Supply_voltage_v40.0
Vgs(Th) (Max) @ id3.9 V @ 500µA
Switching_current_a100.0
Rds on (Max) @ id, vgs4.25mOhm @ 60 A, 10 V
Gate charge (Qg) (Max) @ vgs63 nC @ 10 V

Product details

40 V, 100 A N-channel HEXFET for high-current switching

The Infineon AUIRFU8401 is a 40 V, 100 A N-channel HEXFET MOSFET in a through-hole I-PAK package.

The 4.25 mOhm Rds(on) at 60 A keeps conduction losses low in high-current paths like motor-drive bridges, battery disconnect switches, and DC-DC converter primary switches. The 63 nC total gate charge at 10 V means the gate driver needs to source about 6.3 mA per 100 kHz switching frequency — a standard 1 A driver handles it with margin. The 79 W power dissipation rating assumes adequate heatsinking on the I-PAK tab.

Frequently asked questions

What is the Rds(on) of AUIRFU8401?

Maximum Rds(on) is 4.25 mOhm at 60 A drain current and 10 V gate drive.