40 V, 240 A — the power envelope for high-current switching
The AUIRFS8409-7TRL is an Infineon HEXFET N-channel MOSFET rated for 40 V drain-source and 240 A continuous drain current at 25 °C case temperature. The 0.75 mOhm maximum on-resistance at 100 A, 10 V gate drive keeps conduction losses low in high-current paths like battery isolation, motor-drive H-bridges, and DC-DC converter primary switches. The -55 °C to 175 °C junction temperature range covers under-hood automotive and high-ambient industrial enclosures where thermal headroom is tight.
Gate charge and drive voltage — what 460 nC means for the gate driver
Total gate charge is 460 nC at 10 V. The drive voltage for minimum Rds(on) is 10 V; the part is rated for ±20 V gate-source maximum.
Package — D2PAK with seven leads
The TO-263-7 (D2PAK) package has six leads plus the tab, all surface-mount. The seventh lead is a source Kelvin connection that improves gate-drive loop inductance by separating the power current path from the gate-drive return — important for clean switching at high di/dt. The large exposed tab carries the 375 W power dissipation rating; the board copper area and thermal vias under the tab determine the real junction temperature in the application.
Lifecycle and compliance
The AUIRFS8409-7TRL is listed as Active with ROHS3 compliance. No end-of-life notice or successor part is recorded.