40 V, 1.6 mOhm — the load-switch and motor-drive FET
The Infineon AUIRFS8408TRR is an N-channel HEXFET power MOSFET in a D2PAK (TO-263) surface-mount package, rated for 40 V drain-source and 195 A continuous drain current. The headline figure is the 1.6 mOhm maximum on-resistance at 100 A with 10 V gate drive — this is the conduction-loss floor that determines the copper pour area on the PCB and the heatsinking needed to stay inside the 175°C junction temperature rating. Part of the Automotive HEXFET series, it carries AEC-Q101 qualification.
Gate charge Qg is 324 nC at 10 V.
175°C junction — the under-hood enabler
Rated junction temperature spans -55°C to 175°C.
