Infineon AUIRFS8407TRR, Automotive AEC-Q101 HEXFET® N-Channel MOSFET, 40 V, 195 A, 1.8 mOhm Rds(on) @ 100 A / 10 V, 230 W, D2PAK surface mount, -55°C to 175°C TJ.
| Parameter | Value |
|---|---|
| Series | Automotive, AEC-Q101, HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Operating temperature high | -55°C to 175°C(TJ) |
| Vgs | ±20 V |
| Power | 230.0 |
| Package_type | Bulk |
| Capacitance_uf | 0.0073 |
| Status | Active |
| Supply voltage | 40.0 |
| Vgs(Th) (Max) @ id | 4 V @ 150µA |
| Switching current | 195.0 |
| Rds on (Max) @ id, vgs | 1.8mOhm @ 100 A, 10 V |
| Gate charge (Qg) (Max) @ vgs | 225 nC @ 10 V |
The Infineon AUIRFS8407TRR is an N-channel HEXFET® power MOSFET rated at 40 V drain-source and 195 A continuous drain current, housed in a D2PAK surface-mount package.
Gate threshold is 4 V at 150 µA; maximum gate-source rating is ±20 V. Total gate charge is 225 nC at 10 V.
The D2PAK (TO-263) surface-mount package allows reflow assembly and is suited for automated production lines.
Yes, the AUIRFS8407TRR is part of the Automotive, AEC-Q101 qualified HEXFET® series, making it suitable for automotive-grade applications.