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Infineon Technologies AUIRFS8403TRL — Discrete Semiconductors

AUIRFS8403TRL N-Channel MOSFET, 40 V, 3.3 mOhm, D2PAK

MPNAUIRFS8403TRL
Active

Infineon AUIRFS8403TRL, N-Channel HEXFET® MOSFET, 40 V, 123 A, 3.3 mOhm at 70 A, 10 V, 93 nC gate charge, -55 to 175 °C, D2PAK (TO-263), Surface Mount.

$1.18Ref. price · indicative, final on quote
Infineon Technologies AUIRFS8403TRL datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

AUIRFS8403TRL specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power99.0
Package_typeBulk
Capacitance_uf0.0032
StatusActive
Supply voltage40.0
Vgs(Th) (Max) @ id3.9 V @ 100µA
Switching current123.0
Rds on (Max) @ id, vgs3.3mOhm @ 70 A, 10 V
Gate charge (Qg) (Max) @ vgs93 nC @ 10 V

Product details

The low on-resistance of 3.3 mOhm (max) at 70 A and 10 V gate drive keeps conduction losses down in high-current switching stages — think DC-DC converters, motor drives, and battery management in automotive or industrial power trains. The total gate charge of 93 nC at 10 V is moderate for a device this size; your gate driver needs to source that charge fast enough to keep switching edges clean, especially if you are pushing frequency above 100 kHz.

Rated for junction temperatures from -55°C to 175°C, this MOSFET is built for under-hood automotive and high-ambient industrial enclosures.

That means no last-time-buy pressure and no forced redesign for the foreseeable future.

Frequently asked questions

What is the AUIRFS8403TRL datasheet?

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