The 9 mOhm at 58 A — where the conduction loss floor sits
The Infineon AUIRFS4410Z is a 100 V N-channel HEXFET in the automotive-grade D2PAK. Its 9 mOhm max on-resistance at 58 A and Vgs=10 V sets the conduction loss for a 48 V battery switch or a motor-drive H-bridge leg. That 9 mOhm is the datasheet ceiling at 25°C junction; the actual Rds(on) climbs with temperature per the normalised curve, so the thermal design should budget for roughly 1.4× at 125°C Tj.
97 A pulsed current and the SOA envelope
The 97 A switching current rating defines the single-pulse avalanche and repetitive-pulse SOA boundary. For a 48 V battery disconnect or an inverter rail, the designer sizes the copper pour and heatsink such that the junction never exceeds 175°C during the worst-case fault — the part's Tj ceiling is 175°C, which is 25°C higher than a standard industrial FET and buys margin in under-hood or enclosed-drive enclosures.
Gate charge and drive budget
Qg is 120 nC at Vgs=10 V. At a 100 kHz switching frequency the gate driver must supply 12 mA average plus the peak current to charge the gate capacitance in the dead-time window. A typical 2 A gate-driver IC handles this comfortably, but the 120 nC figure also tells you the Miller plateau duration — relevant for cross-conduction prevention in a half-bridge.