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AUIRFS4310ZTRL

AUIRFS4310ZTRL N-Channel MOSFET, 100 V, 6 mOhm, D2PAK

MPNAUIRFS4310ZTRL
Active

Infineon AUIRFS4310ZTRL, N-channel HEXFET power MOSFET, 100 V Vds, 120 A Id, 6 mOhm Rds(on) max at 75 A, 170 nC gate charge, D2PAK (TO-263) surface mount, -55 to 175 °C junction.

$3.17Ref. price · indicative, final on quote
Infineon Technologies AUIRFS4310ZTRL datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

AUIRFS4310ZTRL specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power250.0
Package_typeBulk
Capacitance_uf0.0069
StatusActive
Supply voltage100.0
Vgs(Th) (Max) @ id4 V @ 150µA
Switching current120.0
Rds on (Max) @ id, vgs6mOhm @ 75 A, 10 V
Gate charge (Qg) (Max) @ vgs170 nC @ 10 V

Product details

100 V, 6 mOhm — the conduction loss number

The AUIRFS4310ZTRL is an Infineon N-channel HEXFET power MOSFET rated for 100 V drain-source and 120 A continuous drain current.

Total gate charge is 170 nC at 10 V.

175 °C junction — where it goes

That 175 °C ceiling is the threshold for under-hood automotive or industrial environments where ambient air hits 105 °C and the self-heating from 120 A pulses pushes the die temperature past what a 150 °C-rated part could survive.

Listed as Active by Infineon — no end-of-life notice or last-time-buy clock is running. RoHS compliance is standard for the AUIRFS4310ZTRL suffix.

Frequently asked questions

What is the Rds(on) of AUIRFS4310ZTRL?

Maximum Rds(on) is 6 mOhm at 75 A drain current with a 10 V gate-source voltage. This is the on-resistance at the test point; actual on-resistance increases with junction temperature per the normalised curve in the datasheet.

What is the gate charge of AUIRFS4310ZTRL?

Total gate charge is 170 nC at a 10 V gate drive. This figure drives the gate-driver current requirement for the target switching frequency.