Skip to main content
Log in
AUIRFS3806

AUIRFS3806 N-Channel MOSFET, 60 V, 43 A, D2PAK

MPNAUIRFS3806
Active

Infineon HEXFET series, AUIRFS3806, N-channel MOSFET, 60 V, 43 A, 15.8 mOhm Rds(on) at 10 V, 30 nC gate charge, D2PAK surface mount, -55 to 175 °C TJ.

$0.86Ref. price · indicative, final on quote
Infineon Technologies AUIRFS3806 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

AUIRFS3806 specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power71.0
Package_typeBulk
Capacitance_uf0.0011
StatusActive
Supply voltage60.0
Vgs(Th) (Max) @ id4 V @ 50µA
Switching current43.0
Rds on (Max) @ id, vgs15.8mOhm @ 25 A, 10 V
Gate charge (Qg) (Max) @ vgs30 nC @ 10 V

Product details

60 V, 43 A N-channel HEXFET in D2PAK

The Infineon AUIRFS3806 is a 60 V, 43 A N-channel MOSFET from the HEXFET series, housed in a D2PAK (TO-263) surface-mount package. It is specified for switching applications where conduction losses are critical: the maximum on-resistance is 15.8 mOhm at Vgs = 10 V and Id = 25 A.

Gate charge and switching losses

Total gate charge (Qg) is 30 nC at Vgs = 10 V. This is a moderate figure for a 60 V FET — the driver sees about 3 mA average current per 100 kHz of switching frequency, which keeps the gate-drive power stage small. The maximum gate-source voltage rating is ±20 V, giving headroom for gate-drive overshoot in hard-switched topologies.

Maximum power dissipation is 71 W, which sets the heatsinking requirement for continuous conduction.

Frequently asked questions

What is the Rds(on) of AUIRFS3806?

The maximum Rds(on) is 15.8 mOhm at Vgs = 10 V and Id = 25 A.

What package does AUIRFS3806 come in?

The AUIRFS3806 is supplied in a D2PAK (TO-263) surface-mount package.