60 V, 43 A N-channel HEXFET in D2PAK
The Infineon AUIRFS3806 is a 60 V, 43 A N-channel MOSFET from the HEXFET series, housed in a D2PAK (TO-263) surface-mount package. It is specified for switching applications where conduction losses are critical: the maximum on-resistance is 15.8 mOhm at Vgs = 10 V and Id = 25 A.
Gate charge and switching losses
Total gate charge (Qg) is 30 nC at Vgs = 10 V. This is a moderate figure for a 60 V FET — the driver sees about 3 mA average current per 100 kHz of switching frequency, which keeps the gate-drive power stage small. The maximum gate-source voltage rating is ±20 V, giving headroom for gate-drive overshoot in hard-switched topologies.
Temperature range and thermal budget
Maximum power dissipation is 71 W, which sets the heatsinking requirement for continuous conduction.