Infineon HEXFET® N-channel MOSFET, AUIRFS3607TRL, 75 V, 80 A, 9 mOhm Rds(on) at 46 A, 10 V, 84 nC gate charge, D2PAK surface mount, -55 to 175 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting_type | Surface Mount |
| Operating temperature high | -55°C to 175°C(TJ) |
| Vgs | ±20 V |
| Power_w | 140.0 |
| Package_type | Bulk |
| Capacitance_uf | 0.0031 |
| Product_status | Active |
| Supply_voltage_v | 75.0 |
| Vgs(Th) (Max) @ id | 4 V @ 100µA |
| Switching_current_a | 80.0 |
| Rds on (Max) @ id, vgs | 9mOhm @ 46 A, 10 V |
| Gate charge (Qg) (Max) @ vgs | 84 nC @ 10 V |
The Infineon AUIRFS3607TRL is an N-channel HEXFET power MOSFET rated at 75 V drain-source breakdown and 80 A continuous drain current, housed in a D2PAK (TO-263) surface-mount package. Gate charge totals 84 nC at 10 V.
Vgs is rated to ±20 V. The 3.1 nF output capacitance (Coss) contributes to the switching energy; the actual switching loss at a given frequency should be calculated from the datasheet's typical Coss vs Vds curve.
The AUIRFS3607TRL is the Infineon (formerly International Rectifier) lead-free version of the IRFS3607, sharing the same D2PAK footprint and identical 75 V, 80 A, 9 mOhm ratings. It is a direct functional replacement for the IRFS3607 in existing layouts.