Infineon HEXFET® AUIRFS3206 automotive N-channel power MOSFET, 60 V, 120 A, 3 mOhm Rds(on), D2PAK, surface mount.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Operating temperature high | -55°C to 175°C(TJ) |
| Vgs | ±20 V |
| Power | 300.0 |
| Package_type | Bulk |
| Capacitance_uf | 0.0065 |
| Status | Active |
| Supply voltage | 60.0 |
| Vgs(Th) (Max) @ id | 4 V @ 150µA |
| Switching current | 120.0 |
| Rds on (Max) @ id, vgs | 3mOhm @ 75 A, 10 V |
| Gate charge (Qg) (Max) @ vgs | 170 nC @ 10 V |
The AUIRFS3206: Surface-mount D2PAK package — the drain tab is the primary heat path. The junction temperature range is -55 to 175 deg C, so the part can operate in engine-bay or under-hood ambient without derating below 150 deg C case temperature. Gate-source voltage is limited to ±20 V absolute maximum — the gate oxide thickness sets this ceiling; a gate-drive rail above 15 V needs a series resistor or zener clamp to prevent oxide rupture.
Maximum gate-source threshold voltage is 4 V at 150 µA drain current.
The part is designated as an automotive power MOSFET and is produced under Infineon's automotive quality management system. RoHS compliance is standard for the HEXFET series; specific certificates and PPAP documentation are available on request through the RFQ process.
The AUIRFS3206 uses the standard D2PAK footprint.