60 V, 240 A N-channel — the conduction-loss floor
The Infineon AUIRFS3006-7P-IR is a HEXFET® series N-channel power MOSFET rated for 60 V drain-source and 240 A continuous drain current. Its headline figure is a maximum on-resistance of 2.1 mOhm at 168 A, 10 V Vgs — that 2.1 mOhm sets the conduction-loss floor for a high-current switch, directly dictating heatsink area and thermal budget in a motor-drive or power-supply output stage.
Gate charge and drive requirements
Total gate charge is 300 nC at 10 V Vgs. At a 100 kHz switching frequency, that pulls 30 mA average from the gate driver — a standard totem-pole driver handles it, but the peak current during the Miller plateau needs a driver capable of sourcing at least 2 A to keep switching losses in check. The ±20 V Vgs rating gives headroom for gate-drive overshoot without avalanche stress on the oxide.