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Infineon Technologies AUIRFS3006-7P-IR — Discrete Semiconductors

Infineon AUIRFS3006-7P-IR N-Channel HEXFET, 60V 240A

MPNAUIRFS3006-7P-IR
Active

Infineon HEXFET® series, AUIRFS3006-7P-IR, N-Channel Power MOSFET, 60 V, 240 A, 2.1 mOhm Rds(on) at 10 V Vgs, 300 nC gate charge, -55°C to 175°C TJ, Surface Mount.

$3.46Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

AUIRFS3006-7P-IR specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power375.0
Package_typeBulk
Capacitance_uf0.0089
StatusActive
Supply voltage60.0
Vgs(Th) (Max) @ id4 V @ 250µA
Switching current240.0
Rds on (Max) @ id, vgs2.1mOhm @ 168 A, 10 V
Gate charge (Qg) (Max) @ vgs300 nC @ 10 V

Product details

60 V, 240 A N-channel — the conduction-loss floor

The Infineon AUIRFS3006-7P-IR is a HEXFET® series N-channel power MOSFET rated for 60 V drain-source and 240 A continuous drain current. Its headline figure is a maximum on-resistance of 2.1 mOhm at 168 A, 10 V Vgs — that 2.1 mOhm sets the conduction-loss floor for a high-current switch, directly dictating heatsink area and thermal budget in a motor-drive or power-supply output stage.

Gate charge and drive requirements

Total gate charge is 300 nC at 10 V Vgs. The ±20 V Vgs rating gives headroom for gate-drive overshoot without avalanche stress on the oxide.

Frequently asked questions

What is Rds(on) for AUIRFS3006-7P-IR?

Maximum Rds(on) is 2.1 mOhm at 168 A drain current with 10 V gate drive. This is the figure to use for worst-case conduction-loss calculations at 25°C junction temperature.

What is the difference between AUIRFS3006-7P and AUIRFS3006-7P-IR?

The suffix -IR typically indicates an Infineon reel-pack or packaging variant. The electrical ratings — 60 V, 240 A, 2.1 mOhm — are identical between the two order codes. Confirm the reel quantity and tape width with your distributor before ordering.