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Infineon Technologies AUIRFR8405TRL — Discrete Semiconductors

AUIRFR8405TRL MOSFET, 40 V, 100 A, 1.98 mOhm, DPAK

MPNAUIRFR8405TRL
Active

Infineon HEXFET series AUIRFR8405TRL, N-Channel MOSFET, 40 V Vds, 100 A Id, 1.98 mOhm Rds(on) max at 90 A, 10 V, DPAK (TO-252) surface mount, -55 to 175 °C junction.

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Specifications

AUIRFR8405TRL Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting_typeSurface Mount
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power_w163.0
Package_typeBulk
Capacitance_uf0.0052
Product_statusActive
Supply_voltage_v40.0
Vgs(Th) (Max) @ id3.9 V @ 100µA
Switching_current_a100.0
Rds on (Max) @ id, vgs1.98mOhm @ 90 A, 10 V
Gate charge (Qg) (Max) @ vgs155 nC @ 10 V

Product details

40 V, 100 A, 1.98 mOhm — what this FET delivers

That on-resistance number is the one that matters for conduction loss — at 90 A the voltage drop stays under 180 mV, which keeps the DPAK package from cooking in a tight layout.

Gate charge and switching — what 155 nC means for your driver

Total gate charge is 155 nC at 10 V. That is a medium-to-high Qg for a 40 V FET — plan for a gate driver that can source at least 1.5 A peak to hit a 100 ns rise time. If you are running PWM above 50 kHz, the driver's average current demand will be a few tens of milliamps; below that, the 155 nC figure is not a constraint.

Junction temperature range — -55 to 175 °C

The 175 °C max junction gives headroom for transient overloads, but the Rds(on) roughly doubles from 25 °C to 175 °C — factor that into your thermal model.

Frequently asked questions

What is the gate charge of AUIRFR8405TRL?

Maximum total gate charge (Qg) is 155 nC at Vgs = 10 V.

What is the Rds(on) of AUIRFR8405TRL?

Maximum Rds(on) is 1.98 mOhm at Id = 90 A and Vgs = 10 V.

Is AUIRFR8405TRL a direct replacement for IRFR8405?

No official cross-reference or second-source record is available for IRFR8405. The AUIRFR8405TRL is an Infineon part; verify pin-compatibility and parametric overlap from the respective datasheets before substituting.