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AUIRFR8405

AUIRFR8405 MOSFET N-CH 40V 100A DPAK, 1.98 mOhm Rds(on)

MPNAUIRFR8405
Active

Infineon HEXFET® AUIRFR8405, N-Channel MOSFET, 40 V, 100 A, 1.98 mOhm Rds(on) at 90 A, 10 V, DPAK (TO-252), -55°C to 175°C junction.

$1.08Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

AUIRFR8405 specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power163.0
Package_typeBulk
Capacitance_uf0.0052
StatusActive
Supply voltage40.0
Vgs(Th) (Max) @ id3.9 V @ 100µA
Switching current100.0
Rds on (Max) @ id, vgs1.98mOhm @ 90 A, 10 V
Gate charge (Qg) (Max) @ vgs155 nC @ 10 V

Product details

40 V, 100 A N-channel — the conduction-loss floor

175°C junction — where it lives

The 175°C ceiling means the die can sustain high-current pulses without immediate thermal shutdown, but the DPAK's copper-pad area on the PCB sets the actual RthJA — a 1-inch² pad on a 2-oz copper pour is typical for keeping the junction below 150°C at 100 A continuous.

Total gate charge is 155 nC at 10 V. For a 100 kHz switching frequency, the gate driver must supply 15.5 mA average current; a 60 nC gate at the same frequency draws only 6 mA, so the AUIRFR8405 demands a stronger driver stage. The ±20 V Vgs max gives headroom for gate-drive overshoot in hard-switched topologies.

Frequently asked questions

What is the AUIRFR8405 datasheet and where can I find it?

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What is the AUIRFR8405 equivalent or replacement?

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What is the pinout of the AUIRFR8405?

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