What this 40 V N-Channel HEXFET® brings to a switching design
The Infineon AUIRFR8403TRL is a 40 V, 100 A N-Channel MOSFET from the HEXFET® series, housed in a surface-mount DPAK (TO-252-3) package. It is built for low-voltage, high-current switching applications such as DC-DC converters, motor drives, and power distribution switches. The 3.1 mOhm typical on-resistance at 10 V gate drive keeps conduction losses low in a 76 A load path, while the 175°C maximum junction temperature gives headroom for thermally constrained environments like automotive engine bays or industrial enclosures.
Rds(on) and gate charge — the switching loss trade-off
Maximum Rds(on) is 3.1 mOhm at 76 A and 10 V gate drive. Gate charge is 99 nC at 10 V.
Package and mounting — DPAK for automated assembly
The DPAK (TO-252-3) footprint is a common surface-mount power package with a tab for heatsinking. The 99 W power dissipation at case temperature gives a thermal budget that assumes a well-designed PCB copper area or external heatsink for continuous high-current operation.
Lifecycle and compliance — active and RoHS3 compliant
It is ROHS3 compliant. Verify REACH or UL documentation with your compliance team if required for end-equipment certification.