What this P-Channel HEXFET does on the board
The Infineon AUIRFR5410TRL is a P-Channel enhancement-mode MOSFET from the Automotive HEXFET® series, qualified to AEC-Q101 for use in powertrain, body electronics, and DC-DC converter applications. It handles a 100 V drain-source voltage and 13 A continuous drain current in a DPAK (TO-252-3) surface-mount package. The P-Channel polarity makes it a natural fit for high-side load switching where a single supply rail is available — no charge pump or bootstrap needed.
205 mOhm on-resistance — what it means for your load budget
Rds(on) is specified at 205 mOhm maximum with 10 V gate drive at 7.8 A. The 66 W package limit at the case gives headroom for pulsed loads.
Gate drive and switching profile
Gate threshold is 4 V maximum at 250 µA, and the recommended drive voltage for minimum on-resistance is 10 V. Gate charge totals 58 nC at 10 V, and input capacitance is 760 pF at 25 V drain bias. That's a moderate gate charge — a standard gate driver or even a microcontroller GPIO through a series resistor can switch it at a few tens of kHz without excessive drive loss. For higher frequencies, account for the Qg in your driver's peak current budget.
Lifecycle and sourcing reality
The AUIRFR5410TRL carries an Active product status with ROHS3 compliance. No end-of-life notice or last-time-buy window is in effect.