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AUIRFR4292

AUIRFR4292 MOSFET N-CH 250V 9.3A DPAK, HEXFET

MPNAUIRFR4292
Active

Infineon (formerly International Rectifier) HEXFET® series, N-channel MOSFET, AUIRFR4292, 250 V, 9.3 A, 345 mOhm, DPAK, surface mount.

$0.74Ref. price · indicative, final on quote
Infineon Technologies AUIRFR4292 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

AUIRFR4292 specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power100.0
Package_typeBulk
Capacitance_uf0.0007
StatusActive
Supply voltage250.0
Vgs(Th) (Max) @ id5 V @ 50µA
Switching current9.3
Rds on (Max) @ id, vgs345mOhm @ 5.6 A, 10 V
Gate charge (Qg) (Max) @ vgs20 nC @ 10 V

Product details

250 V, 9.3 A N-channel — the key blocking and conduction figures

The AUIRFR4292: The 345 mOhm maximum on-resistance is specified at Id = 5.6 A and Vgs = 10 V — that test point gives the Rds(on) at a realistic operating current, not just a low-current corner.

Maximum gate-source voltage is ±20 V, giving the designer headroom to drive the gate with a standard 12 V or 15 V rail without needing a clamp.

Temperature grade and package — automotive-class thermal margin

Junction temperature range is -55 °C to 175 °C, which is the automotive-grade band (AEC-Q101 qualified by inference from the AUIRF prefix).

Active lifecycle — no obsolescence concern for new designs

The AUIRFR4292 is suitable for current and new designs without a last-time-buy window.

Frequently asked questions

What is the Vgs rating of the AUIRFR4292?

The maximum gate-source voltage is ±20 V. This gives the designer headroom to drive the gate with a standard 12 V or 15 V rail without needing an external clamp.