The Infineon AUIRFR4105 is an automotive-grade N-channel HEXFET MOSFET rated for 55 V drain-source breakdown and 20 A continuous switching current.
Junction temperature range — under-hood and high-side capability
Power dissipation is 68 W.
Gate drive voltage — ±20 V Vgs rating
Maximum gate-source voltage is ±20 V. Threshold voltage is 4 V at 250 µA.
Package and mounting — surface-mount D-Pak
Surface-mount package (D-Pak / TO-252) suited for automated assembly on an automotive PCB. The tab is the drain terminal; ensure the copper footprint and thermal vias are sized for the 68 W dissipation if the part runs near its current limit.
